1 ELM54801AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 48.0 62.5 c /w 1 maximum junction-to-ambient steady-state 74.0 90.0 c /w 1, 4 maximum junction-to-lead steady-state rjl 32.0 40.0 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 12 v continuous drain current ta=25c id -5 a ta=70c -4 pulsed drain current idm -28 a 3 avalanche current ias, iar 17 a 3 avalanche energy l=0.1mh eas, ear 14 mj 3 power dissipation ta=25c pd 2.0 w 2 ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM54801AA-N uses advanced trench technology to provide excellent rds(on) and low gate charge. ? vds=-30v ? id=-5a (vgs=-10v) ? rds(on) < 48m (vgs=-10v) ? rds(on) < 57m (vgs=-4.5v) ? rds(on) < 80m (vgs=-2.5v) dual p-channel mosfet s 1 g1 d1 s 2 g2 d2 5 - pin configuration circuit sop-8(top view) pin no. pin name 1 source2 2 gate2 3 source1 4 gate1 5 drain1 6 drain1 7 drain2 8 drain2 4 3 2 1 5 6 7 8
2 ELM54801AA-N electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-30v, vgs= 0v -1 a tj=55c -5 gate-body leakage current igss vds=0v, vgs=12v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.5 -0.9 -1.3 v on state drain current id(on) vgs=-4.5v, vds=-5v -28 a static drain-source on-resistance rds(on) vgs=-10v, id= -5a 40 48 m tj = 125c 60 72 vgs =- 4.5v, id =-3.5 a 45 57 vgs =- 2.5v, id =-2.5 a 60 80 forward transconductance gfs vds =- 5v, id =-5 a 18 s diode forward voltage vsd is =- 1a, vgs=0v -0.7 -1.0 v max. body -diode continuous current is -2.5 a dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 515 645 780 pf output capacitance coss 55 80 105 pf reverse transfer capacitance crss 30 55 80 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 4.0 7.8 12.0 switching parameters total gate charge qg vgs=-4.5v, vds=-15v id=-5a 5.0 7.0 9.0 nc gate-source charge qgs 1.5 nc gate-drain charge qgd 2.5 nc turn - on delay time td(on) vgs=-10v, vds=-15v rl=3, rgen=6 6.5 ns turn - on rise time tr 3.5 ns turn - off delay time td(off) 41.0 ns turn - off fall time tf 9.0 ns body diode reverse recovery time trr if =-5 a, dl/dt = 100a/s 11 15 ns body diode reverse recovery charge qrr if =-5 a, dl/dt = 100a/s 3.5 5.0 nc dual p-channel mosfet 5 - note : 1. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta =25c. the value in any given application depends on the user's speci?c board design. 2. the power dissipation pd is based on tj(max)=150c, using 10s junction-to-ambient thermal resistance. 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial tj=25c. 4. the rja is the sum of the thermal impedence from junction to lead rjl and lead to ambient. 5. the static characteristics in figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 6. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 fr-4 board with 2oz.copper, assuming a maximum junction temperature of tj(max)=150c. the soa curve provides a single pulse rating.
3 typical electrical and thermal characteristics ao4801a 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 30 50 70 90 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ? ? ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-2.5v i d =-2.5a v gs =-10v i d =-5a v gs =-4.5v i d =-3.5a 20 40 60 80 100 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ? ? ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2v -2.5v -4.5v -3v -10v v gs =-2.5v rev 3: mar. 2011 www.aosmd.com page 3 of 5 ELM54801AA-N dual p-channel mosfet 5 -
4 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t j(max) =150c t a =25c 0 1 2 3 4 5 0 3 6 9 12 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-5a 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 s 1s 10ms single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =90c/w rev 3: mar. 2011 www.aosmd.com page 4 of 5 ELM54801AA-N dual p-channel mosfet 5 -
5 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 3: mar. 2011 www.aosmd.com page 5 of 5 ELM54801AA-N dual p-channel mosfet 5 - test circuit & waveform
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